Low temperature photo-oxidation of silicon usingdeep UV radiation
- 24 October 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (22) , 2097-2098
- https://doi.org/10.1049/el:19961377
Abstract
Direct photo-oxidation of silicon at a temperature of 250°C has been investigated using vacuum ultraviolet radiation. The oxidation rate is more than three times greater than that obtained at 350°C using a low pressure mercury lamp. Ellipsometry, Fourier transform infrared spectroscopy, capacitance-voltage and current-voltage measurements indicate these to be high quality layers.Keywords
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