Magnetically Excited Plasma Oxidation of Si
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9A) , L1103-1106
- https://doi.org/10.1143/jjap.34.l1103
Abstract
High-quality Si dioxide was successfully grown at room temperature using a magnetically excited plasma oxidation technique. Helicon waves were probably excited under the growth conditions used. Excellent capacitance-voltage characteristics were obtained after annealing of these oxide films in oxygen ambient for 15 min at 300°–500°C. The growth rate was somewhat low. However, the film thickness increased substantially with annealing. X-ray photoelectron spectroscopic studies indicated that high-quality Si oxides without suboxides were grown even at room temperature.Keywords
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