Comparative study on carbon incorporation in MOCVD AlGaAs layers between arsine and tertiarybutylarsine
- 2 October 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 155 (3-4) , 164-170
- https://doi.org/10.1016/0022-0248(95)00151-4
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Ab initio molecular orbital study on thermal decomposition of tertiarybutylphosphineApplied Surface Science, 1992
- Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsineApplied Physics Letters, 1991
- The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsineJournal of Applied Physics, 1990
- Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1989
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1988
- Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsApplied Physics Letters, 1988
- IR diode laser probing of OMVPE kineticsJournal of Crystal Growth, 1988
- 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAsJournal of Crystal Growth, 1988
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984