Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
- 28 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (18) , 2263-2265
- https://doi.org/10.1063/1.106064
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactorJournal of Crystal Growth, 1991
- Control of residual impurity incorporation in tertiarybutylarsine-grown GaAsJournal of Crystal Growth, 1991
- Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasersApplied Physics Letters, 1990
- High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsineApplied Physics Letters, 1990
- Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgalliumApplied Physics Letters, 1990
- GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsineApplied Physics Letters, 1989
- Tertiary butylarsine grown GaAs solar cellApplied Physics Letters, 1989
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987