Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures
- 14 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (24) , 2899-2901
- https://doi.org/10.1063/1.108042
Abstract
Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (−80 to −150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ∼150 °C. Rates of 2500 Å min−1 are obtained at a pressure of 0.5 mTorr and ∼80 V dc bias. SiO2 masks show no discernible erosion under these conditions, yielding a process that is extremely well suited for laser mesa fabrication. The CH4 addition promotes the anisotropy of the etching by a sidewall polymer mechanism, while the H2 addition significantly enhances the etch rate at low pressure.This publication has 16 references indexed in Scilit:
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