Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy
- 1 March 1999
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3) , 206-213
- https://doi.org/10.1007/s11664-999-0015-0
Abstract
No abstract availableKeywords
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