Structural properties of ZnSe GaAs (100)
- 2 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 703-708
- https://doi.org/10.1016/0022-0248(95)00820-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Atomic diffusion-induced deep levels near ZnSe/GaAs(100) interfacesApplied Physics Letters, 1995
- Optimization of interface parameters and bulk properties in ZnSe-GaAs heterostructuresApplied Physics Letters, 1995
- Local interface composition and band discontinuities in heterovalent heterostructuresPhysical Review Letters, 1994
- Degradation of II-VI based blue-green light emittersApplied Physics Letters, 1993
- ZnSe/ZnMgSSe blue laser diodeElectronics Letters, 1992
- Strain relief process at highly strained semiconductor heterointerfaces studied by high-resolution X-ray diffractionApplied Surface Science, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Structural characterization of GaAs/ZnSe interfacesJournal of Vacuum Science & Technology B, 1988