Aluminium back-surface field doping profiles with surface recombination velocities below 200 cm/s

This publication has 10 references indexed in Scilit:

• Separate contactless measurement of the bulk lifetime and the surface recombination velocity by the harmonic optical generation of the excess carriers
  Solid-State Electronics, 1993
• Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decay
  Journal of Applied Physics, 1992
• Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
  Physical Review Letters, 1986
• Evidence for excess carrier storage in electron-hole plasma in silicon transistors
  IEEE Electron Device Letters, 1985
• Measuring and modeling minority carrier transport in heavily doped silicon
  Solid-State Electronics, 1985
• The Al-Si (Aluminum-Silicon) system
  Bulletin of Alloy Phase Diagrams, 1984
• Electron and hole mobilities in silicon as a function of concentration and temperature
  IEEE Transactions on Electron Devices, 1982
• Operating limits of Al-alloyed high-low junctions for BSF solar cells
  Solid-State Electronics, 1981
• Solid Solubilities of Impurity Elements in Germanium and Silicon*
  Bell System Technical Journal, 1960
• Drift Mobilities in Semiconductors. II. Silicon
  Physical Review B, 1954