Operating limits of Al-alloyed high-low junctions for BSF solar cells

This publication has 14 references indexed in Scilit:

• The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cells
  IEEE Transactions on Electron Devices, 1979
• MIS solar cells with back surface fields
  Applied Physics Letters, 1979
• Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
  IEEE Transactions on Electron Devices, 1979
• Effect of heavy doping on the properties of high-low junction
  IEEE Transactions on Electron Devices, 1978
• Solar cell behaviour under variable surface recombination velocity and proposal of a novel structure
  Solid-State Electronics, 1978
• Influence of bandgap narrowing on the performance of silicon n-p solar cells
  Solid-State Electronics, 1978
• Measurements of bandgap narrowing in Si bipolar transistors
  Solid-State Electronics, 1976
• Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers
  Solid-State Electronics, 1972
• The effects of alloying material on regrowth-layer structure in silicon power devices
  Journal of Materials Science, 1971
• Solid Solubilities of Impurity Elements in Germanium and Silicon*
  Bell System Technical Journal, 1960