Ta 2 O 5 thin films with exceptionally high dielectric constant
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2370-2372
- https://doi.org/10.1063/1.123854
Abstract
We have achieved tantalum pentoxide thin films with extremely highly predominant 〈001〉 orientation. The thin films have an exceptionally high dielectric constant of 90–110, and capacitors using these films as a dielectric layer show the high capacitance and low leakage current meeting the requirements for the new generation of memory devices.
Keywords
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