Analytical expression for the potential of guard rings of diodes operating in the punchthrough mode
- 1 April 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (4) , 838-840
- https://doi.org/10.1109/t-ed.1985.22029
Abstract
An analytical modeling is given to prove that the potential of the floating guard ring varies linearly versus the reverse applied bias in planar punch through diodes with one ring. The result is valid for multiple guard-ring structures. From this modeling and using the criterion of simultaneous breakdown on the main junction and on the rings for a given structure, an approximate and quick determination of the optimized ring spacings is obtained.Keywords
This publication has 5 references indexed in Scilit:
- Blocking capability of planar devices with field limiting ringsSolid-State Electronics, 1983
- Analytical solutions for the breakdown voltages of punched-through diodes having curved junction boundaries at the edgesIEEE Transactions on Electron Devices, 1980
- Theory and breakdown voltage for planar devices with a single field limiting ringIEEE Transactions on Electron Devices, 1977
- Calculation of avalanche breakdown voltages of silicon p-n junctionsSolid-State Electronics, 1967
- High-voltage planar p-n junctionsProceedings of the IEEE, 1967