Effect of reactive sputter etching of SiO2 on the properties of subsequently formed MOS systems
- 1 September 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (9) , 859-868
- https://doi.org/10.1016/0038-1101(82)90173-3
Abstract
No abstract availableKeywords
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