Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon
- 25 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (21) , 2713-2715
- https://doi.org/10.1063/1.121108
Abstract
The gettering of implanted Pt and Ag to hydrogen-induced cavities in Si has been compared for doses from 1×1013 to 1×1015 cm−2. After annealing at 850 °C for 1 h, almost 100% of both implanted metals were relocated to the cavity band for doses less than 1×1014 cm−2. At higher doses, large differences were observed in the gettering behaviour of Pt and Ag, where the amount of Pt was saturated at close to a monolayer coverage of cavity walls, whereas the Ag accumulation at cavities continually increased with dose. Cross-sectional transmission electron microscopy revealed strong differences in the ability of Pt and Ag to form a bulk phase at the cavities. The results indicate that stable silicide formation at the near-surface and trapping of Ag to implantation damage are the main processes which limit gettering at the higher doses.Keywords
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