The Influence of Point Defects on Diffusion and Gettering in Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Phosphorus gettering and intrinsic gettering of nickel in siliconApplied Physics Letters, 1984
- Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurementsApplied Physics A, 1984
- The effects of processing conditions on the out-diffusion of oxygen from Czochralski siliconJournal of Applied Physics, 1983
- Effects of Back‐Side Oxidation of Si Substrates on Sb Diffusion at Front SideJournal of the Electrochemical Society, 1983
- Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in siliconApplied Physics Letters, 1983
- Concentration Profiles of Diffused Dopants in SiliconPublished by Elsevier ,1981
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- Gold in Silicon: Effect on Resistivity and Diffusion in Heavily-Doped LayersJournal of the Electrochemical Society, 1964
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956