Surface structure of epitaxial Pd2Si thin films
- 15 January 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2) , 138-140
- https://doi.org/10.1063/1.93015
Abstract
The surface structure of Pd2Si thin films epitaxially grown on clean Si (111) 7×7 surfaces has been studied by low‐energy electron diffracton (LEED) and Auger electron spectroscopy (AES). Heat treatment in the range of 200–600 °C causes surface segregation of elementary Si over a Pd2Si (0001) surface and produces a reconstructed 3×3 superstructure of Pd2Si. A nonreconstructed Pd2Si‐1×1 surface is produced after removing the segregated Si layer by Ar ion beams and its ordering is found to be not damaged by ion sputtering. A possible cause for the thermally induced Si segregation is also examined experimentally and discussed.Keywords
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