A 1-watt X-Ku band HBT MMIC amplifier with 50% peak power-added efficiency
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (8) , 271-272
- https://doi.org/10.1109/75.242218
Abstract
A broadband, high-efficiency MMIC power amplifier has been developed using AlGaAs-GaAs heterojunction bipolar transistors (HBTs). At 7-V collector bias, the fully matched monolithic amplifier produced 31-dBm CW peak output power with 9.2-dB peak gain and 50% peak power-added efficiency in the 8-15-GHz band. Several amplifiers from five different wafers have ben successfully tested.Keywords
This publication has 5 references indexed in Scilit:
- 4 W, 7-12 GHz, compact CB HBT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 5 W monolithic HBT amplifier for broadband X-band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high-efficiency HBT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave Power Applications of GalIium Arsenide Heterojunction Bipolar TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- A 1-Watt, 8-14-GHz HBT amplifier with >45% peak power-added efficiencyIEEE Microwave and Guided Wave Letters, 1992