Gas-sensitive and temperature-dependent Schottky gated field effect transistors utilizing poly(3-alkylthiophene)s
- 1 April 1993
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 57 (1) , 4111-4116
- https://doi.org/10.1016/0379-6779(93)90566-f
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Fabrication and Characteristics of Schottky Gated Poly(3-alkylthiophene) Field Effect TransistorsJapanese Journal of Applied Physics, 1991
- Gas-Sensitive Junction Characteristics of Poly(3-alkylthiophene) Schottky DiodesJapanese Journal of Applied Physics, 1990
- Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky DiodesJapanese Journal of Applied Physics, 1990
- Dependence of Absorption Spectra and Solubility of Poly(3-alkylthiophene) on Molecular Structure of SolventJapanese Journal of Applied Physics, 1988
- Magnetostriction and Perpendicular Magnetic Anisotropy of Amorphous GdFeCo Thin FilmsJapanese Journal of Applied Physics, 1988
- Spectral Change of Polymer Film Containing Poly(3-Alkylthiophene) with Temperature and Its Application as Optical Recording MediaJapanese Journal of Applied Physics, 1988
- Fusibility of Polythiophene Derivatives with Substituted Long Alkyl Chain and Their PropertiesJapanese Journal of Applied Physics, 1987
- Macromolecular electronic device: Field-effect transistor with a polythiophene thin filmApplied Physics Letters, 1986
- Characteristics of Heterojunction Consisting of Conducting Polymers of Polythiophene and PolypyrroleJapanese Journal of Applied Physics, 1985
- Preparation and Properties of Conducting Heterocyclic Polymer Films by Chemical MethodJapanese Journal of Applied Physics, 1984