A rapid and accurate method for measuring the thickness of diffused layers in silicon and germanium
- 31 January 1961
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 2 (1) , 14-17
- https://doi.org/10.1016/0038-1101(61)90052-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- On the Delineation of p-n Junctions in SiliconJournal of Applied Physics, 1958
- Two Chemical Stains for Marking p-n Junctions in SiliconJournal of Applied Physics, 1958
- The Use of an Interference Microscope for Measurement of Extremely Thin Surface LayersBell System Technical Journal, 1956