Nitrogen content of oxynitride films on Si(100)
- 20 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3473-3475
- https://doi.org/10.1063/1.111948
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- IR ellipsometry investigations of N2O-nitrided silicon oxide thin films on siliconThin Solid Films, 1993
- Role of interfacial nitrogen in improving thin silicon oxides grown in N2OApplied Physics Letters, 1993
- Nitrogen incorporation in SiO2 by rapid thermal processing of silicon and SiO2 in N2OApplied Physics Letters, 1993
- Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygenApplied Physics Letters, 1992
- Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition processApplied Physics Letters, 1992
- Electrical characteristics of oxynitrides grown on textured single-crystal siliconApplied Physics Letters, 1992
- A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2OApplied Physics Letters, 1991
- High quality thin gate oxide prepared by annealing low-pressure chemical vapor deposited SiO2 in N2OApplied Physics Letters, 1991
- Composition and growth kinetics of ultrathin SiO2 films formed by oxidizing Si substrates in N2OApplied Physics Letters, 1990
- Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2OApplied Physics Letters, 1990