Measurement of the thickness of the surface layer on amorphous Ge films using spectroscopic ellipsometry: validity of effective medium modeling
- 15 October 1988
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 27 (20) , 4265-4273
- https://doi.org/10.1364/ao.27.004265
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 27 references indexed in Scilit:
- Thickness dependence of optical gap and void fraction for sputtered amorphous germaniumPhysical Review B, 1987
- Spectroscopic ellipsometry study of glow-discharge-deposited thin films of a-Ge:HJournal of Applied Physics, 1986
- Study of Mo-, Au-, and Ni-implanted molybdenum laser mirrors by multiple angle of incidence spectroscopic ellipsometryJournal of Applied Physics, 1986
- I n s i t u ellipsometry studies of the growth of hydrogenated amorphous silicon by glow dischargeJournal of Vacuum Science & Technology A, 1986
- Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfacesJournal of Applied Physics, 1986
- Characterization of growing thin films by i n s i t u ellipsometry, spectral reflectance and transmittance measurements, and ion-scattering spectroscopyReview of Scientific Instruments, 1985
- A spectroscopic ellipsometry study of the nucleation and growth of plasma-deposited amorphous siliconThin Solid Films, 1985
- Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometryThin Solid Films, 1984
- Analysis of ion-implanted GaAs by spectroscopic ellipsometrySurface Science, 1983
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980