Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
- 23 February 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (8) , 876-878
- https://doi.org/10.1063/1.120922
Abstract
Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture.Keywords
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