High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing
Top Cited Papers
- 23 December 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (26) , 4991-4993
- https://doi.org/10.1063/1.1529079
Abstract
We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.06, and 120 K for x=0.08. We also identify a clear correlation between Tc and the room temperature conductivity. The results indicate that Curie temperatures significantly in excess of the current values are achievable with improvements in growth and post-growth annealing conditions.Comment: 4 pages, submitted to Applied Physics LetterKeywords
All Related Versions
This publication has 13 references indexed in Scilit:
- Suppression of carrier-induced ferromagnetism by composition and spin fluctuations in diluted magnetic semiconductorsPhysical Review B, 2002
- Saturated ferromagnetism and magnetization deficit in optimally annealedepilayersPhysical Review B, 2002
- Effect of the location of Mn sites in ferromagneticon its Curie temperaturePhysical Review B, 2002
- Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAsApplied Physics Letters, 2001
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductorsPhysical Review B, 2001
- Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)AsApplied Physics Letters, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Nonlinear optical Kerr coefficients of disordered mediaPhysical Review A, 1998
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorPhysical Review B, 1997