Ion implantation model considering crystal structure effects
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Precise ion-implantation analysis including channeling effectsIEEE Transactions on Electron Devices, 1986
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- THE STOPPING AND RANGE OF IONS IN SOLIDSPublished by Elsevier ,1984
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974