Energy analysis of secondary ion species sputtered from silicon carbide surface during deuterium ion irradiation
- 31 December 1981
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 103, 351-355
- https://doi.org/10.1016/0022-3115(82)90622-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Analysis of secondary ion species sputtered from SiC surface during He+ and D+ ion irradiationJournal of Nuclear Materials, 1980
- Energy and mass distributions of sputtered particlesJournal of Nuclear Materials, 1980
- Low energy light ion sputtering of metals and carbidesRadiation Effects, 1980
- AES-SIMS(IMA)study of physical and chemical sputtering processesof low-Z materials by energetic ionsJournal of Nuclear Materials, 1979
- Application of AES-SIMS (IMA)-FDS combined systems to physical and chemical sputtering processes of graphite and silicon carbide surfaces with energetic ionsJournal of Nuclear Materials, 1978
- Measurement of erosion yields for a SiC surface on H+, D+ and Ar+ bombardmentJournal of Nuclear Materials, 1978
- Energy and Mass Analyses of Secondary Positive Ions from Silicon Wafer SurfacesJournal of the Mass Spectrometry Society of Japan, 1978
- On the chemical erosion of some low-Z materials by hydrogen plasma and on the possibility of regeneration of the first wall by low pressure plasma CVDJournal of Nuclear Materials, 1976
- Average energy of sputtered ions from fifteen polycrystalline targetsInternational Journal of Mass Spectrometry and Ion Physics, 1975
- Clusters sputtered from tungstenRadiation Effects, 1972