Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

We report growth of self-organized ${\mathrm{In}}_{\mathrm{0.4}}{\mathrm{Ga}}_{\mathrm{0.6}}\mathrm{As}$ quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of ${\mathrm{In}}_{\mathrm{0.4}}{\mathrm{Ga}}_{\mathrm{0.6}}\mathrm{As}$ quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of ${\mathrm{In}}_{\mathrm{0.4}}{\mathrm{Ga}}_{\mathrm{0.6}}\mathrm{As}$ quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that $I_{\mathrm{th}}{\mathrm{=3.85 kA/cm}}^{\mathrm{2}}.$ The lasing spectral output has a peak emission wavelength of 1.013 μm and a linewidth (full width at half maximum) of ∼4 Å at the threshold.