Photorefractive gain in GaAs under a dc electric field
- 10 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (15) , 1369-1371
- https://doi.org/10.1063/1.99981
Abstract
We report the first observation of a photorefractive gain coefficient as high as 2.6 cm−1 in the undoped liquid‐encapsulated Czochralski‐grown GaAs crystals at 1.06 μm under a dc electric field of 13 kV/cm without using the moving grating technique. The absorption coefficient of the crystals used is 1.3 cm−1, showing that a net gain has been achieved. This measured gain coefficient is close to the predicted theoretical value.Keywords
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