Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 256-262
- https://doi.org/10.1016/0022-0248(94)91060-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growthElectronics Letters, 1991