Photoluminescence Investigation of Donor-Level Deepening in GaAs under Hydrostatic Pressure
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A) , L612
- https://doi.org/10.1143/jjap.22.l612
Abstract
Hydrostatic pressure dependence of photoluminescence spectra in Se-doped GaAs has been measured at 1.5 K by using a diamond anvil cell up to 48 kbar. Two emission peaks due to bound-exciton annihilation and donor-acceptor recombination are observed under pressure. With increasing pressure the donor binding energy is found to become as deep as approximately 115 meV at 41 kbar where the crossover of the Γ1–X1 conduction band edges occurs.Keywords
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