Determination of recombination center position from the temperature dependence of minority carrier lifetime in the base region of p-n junction solar cells
- 15 April 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8) , 2942-2947
- https://doi.org/10.1063/1.335234
Abstract
The minority carrier lifetime (τ) in the base region of n+‐p silicon solar cells has been measured in the temperature range ∼77–400 °K using the open‐circuit voltage decay technique. The injection level has been maintained constant in the entire temperature region. Experiment and theory agree in a small temperature region if τn0 (minority carrier lifetime in heavily doped p silicon) is assumed to be temperature independent. However, an excellent fit between experimental and theoretical results is obtained if τn0 is assumed to vary as exp[−(Eτn0/kT)].This publication has 9 references indexed in Scilit:
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