Effect of Electron Radiation on Silicon Nitride Insulated Gate Field Effect Transistors

1 January 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 14 (6) , 293-298
https://doi.org/10.1109/tns.1967.4324809

Abstract

Experiments indicate that silicon nitride passivation layers on top of thermally grown oxide in conjunction with heat treatment can improve the radiation stability of MISFET devices. In addition, MOSFET devices that have glass passivation layers and other special treatment can also show improved radiation stability.

Keywords

ELECTRONS
SILICON
INSULATION
FETS
PASSIVATION
HEAT TREATMENT
THERMAL STABILITY
MISFETS
MOSFET CIRCUITS
GLASS

This publication has 2 references indexed in Scilit:

Effects of ionizing radiation on oxidized silicon surfaces and planar devices
Proceedings of the IEEE, 1967
The Effects of Space Radiation on Mosfet Devices and Some Application Implications of Those Effects
IEEE Transactions on Nuclear Science, 1966