Lattice constants of Al0.8Ga0.2As between −110°C and +90°C
- 1 January 1972
- journal article
- other
- Published by Wiley in Crystal Research and Technology
- Vol. 7 (1-3) , K5-K7
- https://doi.org/10.1002/crat.19720070139
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Einfacher Verdampferkryostat für Röntgenbeugungsuntersuchungen zwischen 77 und 370°KCrystal Research and Technology, 1971
- Luminescence in Indirect Bandgap AlxGa1−xAsJournal of Applied Physics, 1970
- New Set of Tetrahedral Covalent RadiiPhysical Review B, 1970
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- Liquid Phase Epitaxial Growth of Ga[sub 1−x]Al[sub x]As[sup 1]Journal of the Electrochemical Society, 1969
- Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°CJournal of Applied Physics, 1967
- Preparation and Properties of AlAs-GaAs Mixed CrystalsJournal of the Electrochemical Society, 1966
- Phase extent of gallium arsenide determined by the lattice constant and density methodActa Crystallographica, 1965
- Präzisionsbestimmung der Gitterkonstanten vonAIIIBv-VerbindungenActa Crystallographica, 1958
- An experimental investigation of extrapolation methods in the derivation of accurate unit-cell dimensions of crystalsProceedings of the Physical Society, 1945