Effects of rapid thermal process on structural and electrical characteristics of Y2O3 thin films by r.f.-magnetron sputtering

This publication has 14 references indexed in Scilit:

• Enhancing the brightness of thin-film electroluminescent displays by improving the emission process
  IEEE Electron Device Letters, 1994
• High efficiency ZnS:Mn ac thin film electroluminescent device structure
  Applied Physics Letters, 1993
• Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators
  Japanese Journal of Applied Physics, 1990
• Yttrium oxide based metal-insulator-semiconductor structures on silicon
  Thin Solid Films, 1989
• Study of thermally oxidized yttrium films on silicon
  Applied Physics Letters, 1987
• White Light Emitting Thin-Film Electroluminescent Devices with SrS:Ce,Cl/ZnS:Mn Double Phosphor Layers
  Japanese Journal of Applied Physics, 1986
• Choice of dielectrics for TFEL displays
  IEEE Transactions on Electron Devices, 1984
• Physical Concepts of High-Field, Thin-Film Electroluminescence Devices
  Physica Status Solidi (a), 1982
• The importance of insulator properties in a thin-film electroluminescent device
  IEEE Transactions on Electron Devices, 1977
• Dielectric Properties of Y₂O₃ Thin Films Prepared by Vacuum Evaporation
  Japanese Journal of Applied Physics, 1970