Investigation of Charge Trapping in a SiO2/Si System with a Scanning Capacitance Microscope
- 1 June 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (6S) , 3812-3815
- https://doi.org/10.1143/jjap.37.3812
Abstract
The local electrical properties of a SiO2/Si structure is investigated using a scanning capacitance microscope (SCaM). The sample investigated in this study was p-type Si with a 10-nm-thick thermal oxide layer. The capacitance measurement reveals the local variation of capacitance, which reflects the electrical properties of the Si substrate, SiO2/Si interface and SiO2 layer. We have injected charge into the SiO2/Si sample. The localvariation and time evolution of the stored charge is clearly detected in a nondestructive manner by the SCaM.Keywords
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