Local-order of chemically-prepared GaAs() surfaces
- 30 June 2002
- journal article
- Published by Elsevier in Surface Science
- Vol. 507-510, 411-416
- https://doi.org/10.1016/s0039-6028(02)01279-7
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Local-Field Effects in Reflectance Anisotropy Spectra of the (001) Surface of Gallium ArsenidePhysics of the Solid State, 2001
- Local oxide growth on the n-GaAs surface studied by small area XPSSurface Science, 1999
- Scanning tunneling microscopy studies of the GaAs(001) surface and the nucleation of ZnSe on GaAs(001)Materials Science and Engineering: B, 1995
- Photoelectron spectroscopy study of Ga 3d and As 3d core levels on MBE-grown GaAs surfacesSurface Science, 1994
- Reaction of HCl with the GaAs(100) surfaceSurface Science, 1994
- Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuumPhysical Review B, 1992
- Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfacesPhysical Review B, 1992
- Electronic structure and Schottky-barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coatingPhysical Review B, 1992
- Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor depositionPhysical Review Letters, 1992
- Fermi-level movement at GaAs(001) surfaces passivated with sodium sulfide solutionsJournal of Applied Physics, 1991