Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity
- 12 October 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (15) , 2146-2148
- https://doi.org/10.1063/1.122405
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- GaN-based solar-ultraviolet detection instrumentApplied Optics, 1998
- Schottky barrier photodetectors based on AlGaNApplied Physics Letters, 1998
- Visible-blind GaN Schottky barrier detectors grown on Si(111)Applied Physics Letters, 1998
- Ultraviolet Photodetectors Based on AlxGa1-xN Schottky BarriersMRS Internet Journal of Nitride Semiconductor Research, 1998
- Photoconductor gain mechanisms in GaN ultraviolet detectorsApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- 8 × 8 GaN Schottky barrier photodiode arrayfor visible-blind imagingElectronics Letters, 1997
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996
- Schottky barrier photodetector based on Mg-doped p-type GaN filmsApplied Physics Letters, 1993