Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si
- 1 November 2002
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 96 (2) , 94-101
- https://doi.org/10.1016/s0921-5107(02)00298-2
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- Properties of Si1−xGex three-dimensional islandsJournal of Vacuum Science & Technology A, 1999
- Spontaneous ordering of nanostructures on crystal surfacesReviews of Modern Physics, 1999
- Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactorJournal of Applied Physics, 1999
- Direct formation of self-assembled quantum dots under tensile strain by heteroepitaxy of PbSe on PbTe (111)Applied Physics Letters, 1998
- Nature of Stranski–Krastanow growth of InAs on GaAs(001)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Coarsening of Self-Assembled Ge Quantum Dots on Si(001)Physical Review Letters, 1998
- Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributionsApplied Physics Letters, 1997
- Growth and characterization of self-assembled Ge-rich islands on SiSemiconductor Science and Technology, 1996
- In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)Applied Physics Letters, 1996
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994