Nature of Stranski–Krastanow growth of InAs on GaAs(001)
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1330-1333
- https://doi.org/10.1116/1.590069
Abstract
No abstract availableThis publication has 36 references indexed in Scilit:
- Erratum: “Mass transfer in Stranski–Krastanow growth of InAs on GaAs” [Appl. Phys. Lett. 70, 640 (1997)]Applied Physics Letters, 1997
- Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAsGaAs(110) HeteroepitaxyPhysical Review Letters, 1997
- Structural Transition in Large-Lattice-Mismatch HeteroepitaxyPhysical Review Letters, 1996
- Self-organized growth of quantum-dot structuresSemiconductor Science and Technology, 1996
- Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fieldsJournal of Crystal Growth, 1995
- Optical investigation of the self-organized growth of InAs/GaAs quantum boxesJournal of Crystal Growth, 1995
- InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam EpitaxyMRS Proceedings, 1995
- Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)Applied Physics Letters, 1994
- Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopyPhysical Review B, 1992
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984