Annealing behavior of thin polycrystalline silicon films damaged by silicon ion implantation in the critical amorphization range
- 1 February 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 100 (3) , 227-233
- https://doi.org/10.1016/0040-6090(83)90280-8
Abstract
No abstract availableKeywords
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