Structural Studies of Metal-Semiconductor Interfaces with High-Resolution Electron Microscopy
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Lattice imaging of silicide-silicon interfacesThin Solid Films, 1982
- Epitaxial silicidesThin Solid Films, 1982
- Theoretical models of Schottky barriersThin Solid Films, 1982
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Electron microscope studies of the structure and propagation of the Pd2Si/(111)Si interfacePhilosophical Magazine A, 1982
- Experimental High-Resolution Electron MicroscopyPhysics Today, 1981
- Interface and surface structure of epitaxial NiSi2 filmsApplied Physics Letters, 1981
- Advances in Transmission Electron Microscope Techniques Applied to Device Failure AnalysisJournal of the Electrochemical Society, 1980
- A structure modeling of metal-silicide layers by using axial and planar channeling techniquesNuclear Instruments and Methods, 1978
- Epitaxial Growth of Nickel Silicide NiSi2on SiliconJapanese Journal of Applied Physics, 1974