Effects of fluorine ion implantation on metal‐oxide‐semiconductor devices of silicon‐on‐sapphire
- 8 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (6) , 459-461
- https://doi.org/10.1063/1.99443
Abstract
Effects of fluorine ion implantation on electrical characteristics of metal‐oxide‐semiconductor (MOS) devices on silicon‐on‐sapphire have been investigated. The fluorine implantation generates deep acceptor levels, the nature of which is significantly affected by the sequence of the implantation and gate oxidation in device fabrication process steps. It was found that drain leakage current of fluorine‐implanted MOStransistors can be reduced to about 0.1 times compared with unimplanted devices without degrading the basic electrical characteristics.Keywords
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