A simplified model for the distributed base contact impedance in heterojunction bipolar transistors

This publication has 8 references indexed in Scilit:

• A parameter extraction technique for heterojunction bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Millimeter-wave AlGaAs/GaAs p-n-p HBT
  IEEE Electron Device Letters, 1991
• Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
  IEEE Transactions on Electron Devices, 1991
• High frequency Pnp AlGaAs/InGaAs heterojunction bipolar transistor with an ultrathin strained base
  Electronics Letters, 1990
• New and unified model for Schottky barrier and III–V insulator interface states formation
  Journal of Vacuum Science and Technology, 1979
• Bipolar Microwave Linear Power Transistor Design
  IEEE Transactions on Microwave Theory and Techniques, 1979
• Models for contacts to planar devices
  Solid-State Electronics, 1972
• Some limitations of the power output capability of VHF transistors
  IEEE Transactions on Electron Devices, 1968