Mechanism of the chemical vapour deposition of Si3N4 films prepared from SiH2Cl2 and NH3 under kinetically controlled conditions
- 25 June 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 92 (4) , 333-340
- https://doi.org/10.1016/0040-6090(82)90157-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A bibliography on silicon nitride filmsMicroelectronics Reliability, 1980
- The preparation, characterization and applications of silicon nitride thin filmsThin Solid Films, 1980
- Mass Spectrometric Detection of Intermediates in Chemical Vapor Deposition of Si3 N 4 from SiCl4 and NH 3Journal of the Electrochemical Society, 1978
- Experimental Investigation of the Gas Phase in a Chemical Vapor Deposition Reaction: Application to the Silane‐Ammonia Reaction Leading to Silicon Nitride DepositsJournal of the Electrochemical Society, 1978
- Mass Spectrometric Detection of Intermediates in Chemical Vapor Deposition of Si3 N 4Journal of the Electrochemical Society, 1977
- Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systemsJournal of Crystal Growth, 1975
- The Role of Homogeneous Reactions in Chemical Vapor DepositionJournal of the Electrochemical Society, 1971
- Silicon Nitride Thin Films from SiCl[sub 4] Plus NH[sub 3]: Preparation and PropertiesJournal of the Electrochemical Society, 1968
- Some Properties of Vapor Deposited Silicon Nitride Films Using the SiH[sub 4]-NH[sub 3]-H[sub 2] SystemJournal of the Electrochemical Society, 1967
- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967