Matrix effects in sims depth profiles of SiGe superlattices

This publication has 16 references indexed in Scilit:

• Structural properties of ultrathin arsenic-doped layers in silicon
  Applied Physics Letters, 1989
• Theoretical analysis of Raman spectra of finite-stage Si/Si-Ge Fibonacci superlattices
  Physical Review B, 1989
• High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
  IEEE Electron Device Letters, 1989
• Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system
  IEEE Electron Device Letters, 1989
• Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3
  Applied Physics Letters, 1988
• Resonant tunneling in Si/Si1−xGex double-barrier structures
  Applied Physics Letters, 1988
• Folded acoustic phonons in Si/GexSi1−xstrained-layer superlattices
  Physical Review B, 1987
• Enhancement- and depletion-mode p-channel Ge_xSi_1-xmodulation-doped FET's
  IEEE Electron Device Letters, 1986
• Calibration of the Harwell series II Bi-implanted RBS standards
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Intercomparison of absolute standards for RBS studies
  Nuclear Instruments and Methods in Physics Research, 1983