Structural properties of ultrathin arsenic-doped layers in silicon
- 3 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (14) , 1332-1334
- https://doi.org/10.1063/1.100707
Abstract
We have grown δ-doped layers in Si by low-energy As-ion implantation during molecular beam epitaxy. The layers were investigated using cross-sectional transmission electron microscopy, secondary-ion mass spectrometry, Rutherford backscattering, and electrical measurements. The δ-doped layers were between 3.5 and 5.5 nm thick, and showed perfect epitaxy with 50–80% of the incorporated As on substitutional sites. Layers doped at concentrations from 1×1013 cm−2 to 8×1013 cm−2 had bulk-like mobilities and spanned the metal to insulator transition.Keywords
This publication has 8 references indexed in Scilit:
- I n s i t u doping by As ion implantation of silicon grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Bent-band theory of conductivity in heavily doped semiconductors at low temperaturesPhysical Review B, 1987
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- Metal-insulator transition in Si: AsPhysical Review B, 1983
- Model calculations for accelerated As ion doping of Si during molecular beam epitaxyJournal of Applied Physics, 1983
- Silicon MBE apparatus for uniform high-rate deposition on standard format wafersJournal of Vacuum Science and Technology, 1982
- The study of lattice defects by channellingReports on Progress in Physics, 1982
- Metal-Insulator Transition in Granular AluminumPhysical Review Letters, 1981