I n s i t u doping by As ion implantation of silicon grown by molecular-beam epitaxy
- 15 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (8) , 3938-3944
- https://doi.org/10.1063/1.341350
Abstract
The incorporation and electrical activation of As, implanted in situ during molecular‐beam epitaxial growth of epilayers on Si(100), is reported. Parameters varied included growth temperature (460–700 °C), implantation energy (500–1000 eV), and concentration (1017→>1020/cm3 ). In general, the material was excellent with 100% activation and bulk mobilities for concentrations up to the equilibrium solid solubility limit and carrier densities in excess of five times this limit in highly doped samples.This publication has 21 references indexed in Scilit:
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