Model calculations for accelerated As ion doping of Si during molecular beam epitaxy
- 1 March 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (3) , 1579-1582
- https://doi.org/10.1063/1.332140
Abstract
A model is presented for calculating the incorporation probability and steady state depth distribution of accelerated dopants in films deposited from the vapor phase. Terms accounting for thermal sticking probabilities, low-energy implantation, diffusion, surface segregation, and preferential sputtering are included. Model predictions are shown to be in good agreement with Ota’s experimental data [J. Appl. Phys. 51, 1102 (1980)] for the incorporation probability of As, as a function of film-growth temperature and As acceleration energy, in Si films grown by molecular beam epitaxy.This publication has 12 references indexed in Scilit:
- Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductorsJournal of Vacuum Science and Technology, 1982
- Surface segregation in binary solid solutions: A theoretical and experimental perspectiveJournal of Vacuum Science and Technology, 1981
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- Luminescent p-GaAs grown by zinc ion doped MBEApplied Physics Letters, 1979
- Ionized beam doping in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1978
- ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’Applied Physics Letters, 1978
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978
- Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor DepositionJapanese Journal of Applied Physics, 1976
- Adsorption of Zn on GaAsSurface Science, 1973