Photoacoustic in situ measurement of quantum efficiency for photoelectrochemical evolution of hydrogen on p-indium phosphide
- 31 May 1988
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 23 (5) , 759-763
- https://doi.org/10.1016/0025-5408(88)90042-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 9 references indexed in Scilit:
- Semiconductor electrodes. 59. Photocurrent efficiencies at p-indium phosphide electrodes in aqueous solutionsThe Journal of Physical Chemistry, 1985
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Photoelectrochemical evolution of hydrogen on p-indium phosphideThe Journal of Physical Chemistry, 1984
- High conversion efficiency and high radiation resistance InP homojunction solar cellsApplied Physics Letters, 1984
- Hydrogen-evolving semiconductor photocathodes: nature of the junction and function of the platinum group metal catalystJournal of the American Chemical Society, 1982
- 11.5% solar conversion efficiency in the photocathodically protected p-InP/V3+-V2+-HCI/C semiconductor liquid junction cellApplied Physics Letters, 1981
- Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivityApplied Physics Letters, 1981
- Bimolecular Electroluminescent Transitions in GaPPhysical Review Letters, 1959
- Radiative Transitions in SemiconductorsPhysical Review B, 1955