MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10A) , L1587-1589
- https://doi.org/10.1143/jjap.26.l1587
Abstract
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with a mirror-like surface and good thickness uniformity (Δd/d=±10%) was obtained. Residual stress in the InP film was 5.7±108 dyn/ cm2 for the InP/GaAs/Si structure, as compared to 8.3×108 dyn/cm2 for the InP directly grown on Si. This shows that the GaAs intermediate layer is also effective in reducing the residual stress in the InP epilayer.Keywords
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