Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition
- 15 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (24) , 1725-1726
- https://doi.org/10.1063/1.97728
Abstract
Heteroepitaxial growth of InP on Si by low pressure metalorganic chemical vapor deposition is reported. The trimethylindium‐trimethylphosphine adduct was used as the In source in this study and PH3 as the source of P. From x‐ray and scanning electron microscopy examinations, good crystallinity InP epilayers with mirrorlike surfaces can be grown directly on (100) and (111) Si substrates. The carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that the InP/Si epilayers are of good quality.Keywords
This publication has 6 references indexed in Scilit:
- Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processingJournal of Crystal Growth, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Adducts in the growth of III–V compoundsJournal of Crystal Growth, 1984
- Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’sJournal of Vacuum Science & Technology B, 1984
- Overlength modes of InP transferred-electron devicesElectronics Letters, 1974