Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processing
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 503-508
- https://doi.org/10.1016/0022-0248(86)90344-1
Abstract
No abstract availableKeywords
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